YANGJIE MMBT3904Q

YANGJIE · Transistors (BJTs) · MPN MMBT3904Q

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300mW Surface Mount SOT-23

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