YANGJIE MMBT3904L3

YANGJIE · Transistors (BJTs) · MPN MMBT3904L3

No reviews yet — be the first to review YANGJIE MMBT3904L3.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation100mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 100mW Surface Mount DFN-3(0.6x1)

Related Transistors (BJTs)