YANGJIE BC856BQ

YANGJIE · Transistors (BJTs) · MPN BC856BQ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain250
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 65V 0.1A 100MHz 300mW Surface Mount SOT-23

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