YANGJIE 2SB1197-Q

YANGJIE · Transistors (BJTs) · MPN 2SB1197-Q

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain82
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 32V 800mA 100MHz 200mW Surface Mount SOT-23

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