Wuxi China Resources Huajing Microelectronics 3DD13005GRD

Wuxi China Resources Huajing Microelectronics · Transistors (BJTs) · MPN 3DD13005GRD

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain15
Pd - Power Dissipation75W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 4A 5MHz 75W Through Hole TO-262-3

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