Wuxi China Resources Huajing Microelectronics 3DD13003E1D-BD

Wuxi China Resources Huajing Microelectronics · Transistors (BJTs) · MPN 3DD13003E1D-BD

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain15
Pd - Power Dissipation800mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.3A
Operating Temperature-
Vce Saturation(VCE(sat))800mV

Technical details

400V 15 1 NPN NPN 1.3A TO-92-3 Single Bipolar Transistors RoHS

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