Wuxi China Resources Huajing Microelectronics 3DD13003E1D

Wuxi China Resources Huajing Microelectronics · Transistors (BJTs) · MPN 3DD13003E1D

No reviews yet — be the first to review Wuxi China Resources Huajing Microelectronics 3DD13003E1D.

Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain15
Pd - Power Dissipation800mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.3A
Operating Temperature-
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor NPN 400V 1.3A 5MHz 0.8W Through Hole TO-92

Related Transistors (BJTs)