WEIDA · Transistors (BJTs) · MPN S8550
No reviews yet — be the first to review WEIDA S8550.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 400 |
| Pd - Power Dissipation | 625mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor NPN 25V 0.5A 100MHz 0.625W Through Hole TO-92