WeEn PHE13005,127

WeEn · Transistors (BJTs) · MPN PHE13005,127

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain10
Pd - Power Dissipation75W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 4A 75W Through Hole TO-220AB

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