UTC UB1580G-AB3-R

UTC · Transistors (BJTs) · MPN UB1580G-AB3-R

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Specifications

Vbe Saturation(VBE(sat))-
Current - Collector Cutoff10uA
Vbe On(VBE(on))2.8V;2V;3V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain1000;500
Pd - Power Dissipation600mW
typePNP
Current - Collector(Ic)4A
Operating Temperature-
Vce Saturation(VCE(sat))2V

Technical details

Bipolar (BJT) Transistor PNP 150V 4A 600mW Surface Mount SOT-89

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