UTC PZT5551G-B-AA3-R

UTC · Transistors (BJTs) · MPN PZT5551G-B-AA3-R

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain400
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)690mA
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 160V 690mA 300MHz 2W Surface Mount SOT-223

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