UTC MMBT9012G-I-AE3-R

UTC · Transistors (BJTs) · MPN MMBT9012G-I-AE3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain190
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor PNP 20V 500mA 225mW Surface Mount SOT-23

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