UTC HE8550G-E-AE3-R

UTC · Transistors (BJTs) · MPN HE8550G-E-AE3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)190MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain500
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation350mW
typePNP
Number1 PNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A 0.35W Surface Mount SOT-23

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