UTC · Transistors (BJTs) · MPN HE8050G-D-AB3-R
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 25V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 160 |
| Pd - Power Dissipation | 500mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 500mW Surface Mount SOT-89