UTC DTD143EG-AE3-R

UTC · Transistors (BJTs) · MPN DTD143EG-AE3-R

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain47
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount SOT-23

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