UTC DTC114EG-AE3-R

UTC · Transistors (BJTs) · MPN DTC114EG-AE3-R

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Specifications

Transition frequency(fT)250MHz
DC Current Gain30
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 200mW Surface Mount SOT-23

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