UTC D882SSG-P-AE3-R

UTC · Transistors (BJTs) · MPN D882SSG-P-AE3-R

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation10W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 80MHz 10W Surface Mount SOT-23

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