UTC 8550SG-D-AE3-R

UTC · Transistors (BJTs) · MPN 8550SG-D-AE3-R

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)700mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 20V 700mA 100MHz 350mW Surface Mount SOT-23

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