UTC 2SD882L-P-T60-K

UTC · Transistors (BJTs) · MPN 2SD882L-P-T60-K

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain160
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 80MHz 1W Through Hole TO-126

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