UTC 2SD667L-C-T9N-B

UTC · Transistors (BJTs) · MPN 2SD667L-C-T9N-B

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain320
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 140MHz 0.9W Through Hole TO-92NL

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