UTC 2SD1816G-R-TF3-T

UTC · Transistors (BJTs) · MPN 2SD1816G-R-TF3-T

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain560
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor 100V 4A 180MHz 2W Through Hole TO-220F

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