UTC 2SD1664G-Q-AB3-R

UTC · Transistors (BJTs) · MPN 2SD1664G-Q-AB3-R

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain390
Pd - Power Dissipation1.9W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 32V 1A 150MHz 1.9W Surface Mount SOT-89

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