UTC 2SD1616AG-L-AB3-R

UTC · Transistors (BJTs) · MPN 2SD1616AG-L-AB3-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain600
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation800mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 160MHz 800mW Surface Mount SOT-89

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