UTC 2SB649AL-C-T9N-K

UTC · Transistors (BJTs) · MPN 2SB649AL-C-T9N-K

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation600mW
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 160V 1.5A 140MHz 0.6W Through Hole TO-92NL

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