UTC 2SB1198G-R-AE3-R

UTC · Transistors (BJTs) · MPN 2SB1198G-R-AE3-R

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain390
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature0℃~+70℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 80V 500mA 200mW Surface Mount SOT-23

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