UTC 2SB1151L-Y-T60-K

UTC · Transistors (BJTs) · MPN 2SB1151L-Y-T60-K

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain400
Pd - Power Dissipation1.3W
typePNP
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126

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