TWGMC DTC114EUA

TWGMC · Transistors (BJTs) · MPN DTC114EUA

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Resistor Ratio1.2
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@10mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 200mW Surface Mount SOT-323

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