TWGMC BC857B

TWGMC · Transistors (BJTs) · MPN BC857B

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200mW Surface Mount SOT-23

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