TOSHIBA TTC1949-GR,LF

TOSHIBA · Transistors (BJTs) · MPN TTC1949-GR,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain180
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))400mV

Technical details

50V 180 NPN 500mA TO-236-3(SOT-23-3) Single Bipolar Transistors RoHS

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