TOSHIBA TTC011B,Q(S

TOSHIBA · Transistors (BJTs) · MPN TTC011B,Q(S

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Specifications

Current - Collector Cutoff200nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO230V
DC Current Gain320
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.5W
ConfigurationStandalone
typeNPN
Number1 NPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1.5V

Technical details

230V 320 NPN 1 NPN 1A TO-126N Single Bipolar Transistors RoHS

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