TOSHIBA TTC004B,Q

TOSHIBA · Transistors (BJTs) · MPN TTC004B,Q

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain140
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 160V 1.5A 100MHz 1.5W Through Hole TO-126

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