TOSHIBA TTA006B,Q

TOSHIBA · Transistors (BJTs) · MPN TTA006B,Q

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Specifications

Current - Collector Cutoff200nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO230V
Emitter-Base Voltage VEBO5V
DC Current Gain320
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor PNP 230V 1A 70MHz 1.5W Through Hole TO-126N

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