TOSHIBA TTA004B,Q(S

TOSHIBA · Transistors (BJTs) · MPN TTA004B,Q(S

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Specifications

Current - Collector Cutoff100pA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain280
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation10W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 160V 1.5A 100MHz 10W Through Hole TO-126N

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