TOSHIBA TMBT3906,LM

TOSHIBA · Transistors (BJTs) · MPN TMBT3906,LM

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)150mA
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

50V 100 1 PNP PNP 150mA SOT-23 Single Bipolar Transistors RoHS

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