TOSHIBA · Transistors (BJTs) · MPN TBD62503AFWG(Z,EHZ)
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| Output Leakage Current(Icex) | - |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Input Capacitiance(Ci) | - |
| Reverse Leakage Current (Ir) | - |
| number of channels | Seven channels |
| Input Current(on) | 0.1mA |
| Vce Saturation(VCE(sat)) | 650mV |
| type | MOS |
| Voltage - Forward(Vf) | - |
| Voltage - Input(Max) | 25V |
| Input Current(off) | 1uA |
| Current - Collector(Ic) | 300mA |
50V Seven channels MOS 300mA SOP-16 Bipolar Transistor Arrays RoHS