TOSHIBA TBD62183AFNG(Z,EL)

TOSHIBA · Transistors (BJTs) · MPN TBD62183AFNG(Z,EL)

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Specifications

Collector - Emitter Voltage VCEO50V
Reverse Leakage Current (Ir)1uA
number of channels8
Voltage - Forward(Vf)1.5V
Voltage - Input(Max)30V
Input Current(off)1uA
Current - Collector(Ic)50mA
Operating Temperature-40℃~+85℃

Technical details

50V 8 50mA SSOP-18 Bipolar Transistor Arrays RoHS

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