TOSHIBA TBC857B,LM

TOSHIBA · Transistors (BJTs) · MPN TBC857B,LM

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Specifications

Current - Collector Cutoff30nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain210
Pd - Power Dissipation320mW
Number1 PNP
typePNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 320mW Surface Mount SOT-23

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