TOSHIBA · Transistors (BJTs) · MPN TBC847B,LM
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| Current - Collector Cutoff | 30nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 320mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 170mV |
Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 320mW Surface Mount SOT-23