TOSHIBA RN4987FE,LXHF(CT

TOSHIBA · Transistors (BJTs) · MPN RN4987FE,LXHF(CT

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO6V
DC Current Gain80
Vce Saturation(VCE(sat))300mV
Input Resistor10kΩ
Resistor Ratio0.232
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation100mW
Voltage - Input(Max)(VI(off))1V
Input Voltage (VI(on)@Ic,Vce)1.8V
Current - Collector(Ic)100mA

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 100mW Surface Mount SOT-563(SOT-666)

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