TOSHIBA · Transistors (BJTs) · MPN RN4907,LXGF
No reviews yet — be the first to review TOSHIBA RN4907,LXGF.
| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -40℃~+150℃ |
| Input Resistor | 10kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| type | NPN+PNP |
| Resistor Ratio | 0.213 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 1V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363