TOSHIBA RN2703JE(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN RN2703JE(TE85L,F)

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Specifications

Emitter-Base Voltage VEBO10V
DC Current Gain70
typePNP
Input Resistor22kΩ
Resistor Ratio1
Number2 PNP Pre-Biased (Emitter-Coupled)
Pd - Power Dissipation100mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,0.2V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Emitter-Coupled) 50V 100mA 100mW Surface Mount SOT-553

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