TOSHIBA RN2409,LF

TOSHIBA · Transistors (BJTs) · MPN RN2409,LF

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Current - Collector(Ic)100mA
Input Resistor47kΩ
Resistor Ratio2.14
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

50V 70 100mA 1 PNP Pre-Biased 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

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