TOSHIBA · Transistors (BJTs) · MPN RN2405,LF
No reviews yet — be the first to review TOSHIBA RN2405,LF.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.051 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V |
| Voltage - Input(Max)(VI(off)) | 800mV@0.1mA,5V |
50V 80 100mA 200mW 1 PNP Pre-Biased PNP SOT-346 Single, Pre-Biased Bipolar Transistors RoHS