TOSHIBA RN2402,LF

TOSHIBA · Transistors (BJTs) · MPN RN2402,LF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain50
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor10kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA Surface Mount TO-236-3(SOT-23-3)

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