TOSHIBA RN2303,LF

TOSHIBA · Transistors (BJTs) · MPN RN2303,LF

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Specifications

Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
DC Current Gain70
Operating Temperature-
Current - Collector(Ic)100mA
Input Resistor22kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation100mW
Voltage - Input(Max)(VI(off))1V
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 100mW Surface Mount SOT-323

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