TOSHIBA · Transistors (BJTs) · MPN RN2106MFV,L3F(CT
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 80 |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 10 |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 150mW |
50V 80 100mA 1 PNP Pre-Biased 150mW SOT-723 Single, Pre-Biased Bipolar Transistors RoHS