TOSHIBA RN2103,LF(CT

TOSHIBA · Transistors (BJTs) · MPN RN2103,LF(CT

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain70
Vce Saturation(VCE(sat))300mV@5mA,0.25mA
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation100mW

Technical details

50V 70 100mA 100mW PNP 1 PNP Pre-Biased SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

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