TOSHIBA RN2102MFV,L3F(CT

TOSHIBA · Transistors (BJTs) · MPN RN2102MFV,L3F(CT

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain50
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation150mW

Technical details

50V 50 100mA 1 PNP Pre-Biased 150mW SOT-723 Single, Pre-Biased Bipolar Transistors RoHS

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