TOSHIBA · Transistors (BJTs) · MPN RN2101,LF(CT
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 30 |
| Vce Saturation(VCE(sat)) | 300mV@5mA,0.25mA |
| Operating Temperature | - |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 100mW |
50V 30 100mA 100mW PNP 1 PNP Pre-Biased SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS