TOSHIBA · Transistors (BJTs) · MPN RN1965(TE85L,F)
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 80 |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.0468 |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
50V 80 100mA 2 NPN (Pre-Biased) 200mW TSSOP-6(SC-88)SOT-363 Single, Pre-Biased Bipolar Transistors RoHS