TOSHIBA RN1965(TE85L,F)

TOSHIBA · Transistors (BJTs) · MPN RN1965(TE85L,F)

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Current - Collector(Ic)100mA
Input Resistor2.2kΩ
Resistor Ratio0.0468
Number2 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

50V 80 100mA 2 NPN (Pre-Biased) 200mW TSSOP-6(SC-88)SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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